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    Rochester Electronics LLC 2SC5435-T1-A

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    Renesas Electronics Corporation 2SC5435-T1-A

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    2SC5435 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC5435 NEC NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYP Original PDF
    2SC5435 NEC NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION Original PDF
    2SC5435 NEC Semiconductor Selection Guide Original PDF
    2SC5435 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5435EB-T1 NEC NPN Epitaxial Silicon Transistor for High-frequency Low-noise Amplification Flat-lead 3-pin Thin-type Ultra Super Minimold Original PDF
    2SC5435FB NEC NPN Epitaxial Silicon Transistor for High-frequency Low-noise Amplification Flat-lead 3-pin Thin-type Ultra Super Minimold Original PDF
    2SC5435-T1 NEC Reduced noise high frequency amplification transistor Original PDF

    2SC5435 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5435

    Abstract: 2SC5437 NEC 2505 nj
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Built-in low noise, high-gain transistor


    Original     		PDF PA836TD 2SC5435, 2SC5437) S21e2 2SC5435 2SC5437 2SC5435 2SC5437 NEC 2505 nj

    2SC5435

    Abstract: 2SC5786 NEC 7815
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor


    Original     		PDF PA860TC 2SC5435, 2SC5786) S21e2 2SC5435 2SC5786 2SC5435 2SC5786 NEC 7815

    2SC5435

    Abstract: 2SC5600 IC 14558 5mA25
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor


    Original     		PDF PA841TD 2SC5435, 2SC5600) S21e2 2SC5435 2SC5600 2SC5435 2SC5600 IC 14558 5mA25

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA862TD 2SC5435, 2SC5800) 2SC5435 2SC5800 P15685EJ1V0DS

    2SC5435

    Abstract: 2SC5745 0782 K 2564 nec 2401 831
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA854TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5745) Q1: High gain transistor suited for buffer applications


    Original     		PDF PA854TC 2SC5435, 2SC5745) S21e2 2SC5435 2SC5745 2SC5435 2SC5745 0782 K 2564 nec 2401 831

    2SC5010

    Abstract: 2SC5435 2SC5435-T1 marking tk
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package


    Original     		PDF 2SC5435 2SC5010 2SC5435-T1 2SC5010 2SC5435 2SC5435-T1 marking tk

    9904 120 13843

    Abstract: 2SC5435 2SC5800 nec 4308
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA862TD 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 9904 120 13843 2SC5435 2SC5800 nec 4308

    k 2059 TRANSISTOR

    Abstract: UPA850TD 2SC5435 2SC5736 marking VF
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA850TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5736) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA850TD 2SC5435, 2SC5736) S21e2 2SC5435 2SC5736 k 2059 TRANSISTOR UPA850TD 2SC5435 2SC5736 marking VF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA862TS 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 PU10332EJ01V0DS

    2SC5435

    Abstract: NESG2107M33 NEC JAPAN IC xf 2 6-pin marking XF UPA867TS
    Text: DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA867TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5435, NESG2107M33) Q1: High gain transistor


    Original     		PDF PA867TS 2SC5435, NESG2107M33) S21e2 2SC5435 NESG2107M33 2SC5435 NESG2107M33 NEC JAPAN IC xf 2 6-pin marking XF UPA867TS

    8205 6-pin

    Abstract: 2SC5435 2SC5786
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA860TD 2SC5435, 2SC5786) S21e2 2SC5435 2SC5786 8205 6-pin 2SC5435 2SC5786

    2SC5435

    Abstract: 2SC5600 of ic 3915
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: High gain transistor suited for buffer applications


    Original     		PDF PA841TC 2SC5435, 2SC5600) S21e2 2SC5435 2SC5600 2SC5435 2SC5600 of ic 3915

    F 0552

    Abstract: PA862T
    Text: NPN SILICON RF TWIN TRANSISTOR PA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA862TD 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 P15685EJ1V0DS F 0552 PA862T

    2SC5435

    Abstract: 2SC5800
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA862TS 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 2SC5435 2SC5800

    nec japan 7815

    Abstract: 2SC5435 2SC5745
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA854TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5745) Q1: High gain transistor suited for buffer applications


    Original     		PDF PA854TC 2SC5435, 2SC5745) S21e2 2SC5435 2SC5745 nec japan 7815 2SC5435 2SC5745

    417 - 906

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600)


    Original     		PDF PA841TC 2SC5435, 2SC5600) S21e2 2SC5435 2SC5600 417 - 906

    0443 IC

    Abstract: 2SC5435 2SC5745
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA854TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5745) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA854TD 2SC5435, 2SC5745) S21e2 2SC5435 2SC5745 0443 IC 2SC5435 2SC5745

    2SC5010

    Abstract: 2SC5435 V 8623 transistor marking tk 9418 transistor
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.) UNIT


    Original     		PDF 2SC5435 2SC5010 2SC5435 V 8623 transistor marking tk 9418 transistor

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA862TS 2SC5435, 2SC5800) 2SC5435 2SC5800 PU10332EJ02V0DS

    2SC5435

    Abstract: 2SC5437 nec 2401 7248 5E-25
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA836TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5437) Q1: Low phase distortion, high-gain transistor


    Original     		PDF PA836TC 2SC5435, 2SC5437) S21e2 2SC5435 2SC5437 2SC5435 2SC5437 nec 2401 7248 5E-25

    2SC5736

    Abstract: 2SC5435
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA850TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5736) Q1: High gain transistor


    Original     		PDF PA850TC 2SC5435, 2SC5736) S21e2 2SC5435 2SC5736 2SC5736 2SC5435

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    NEC 2987

    Abstract: transistor NEC B 617 transistor NEC D 822 P TL 1701 9418 transistor TL 431 0323
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • PACKAGE DIMENSIONS in mm Ultra super mini-mold thin flat package (1.4 mm x 0.8 mm x 0.59 mm: TYP.) • Contains same chip as 2S C 5010


    OCR Scan     		PDF 2SC5435 NEC 2987 transistor NEC B 617 transistor NEC D 822 P TL 1701 9418 transistor TL 431 0323

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm FEATURE • Ultra super mini-mold thin flat package 1.4 ±0.05 (1.4 mm x 0.8 mm x 0.59 mm: TYP.) • 0.8 ± 0.1


    OCR Scan     		PDF 2SC5435 2SC5010