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    NEC Electronics Group 2SC5800-T1

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    2SC5800 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC5800 NEC NPN Silicon Transistor Original PDF
    2SC5800 NEC HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE Original PDF
    2SC5800FB NEC NPN Silicon RF Transistor for High-frequency Low Noise Flat-lead 3-pin Thin-type Ultra Super Minimold Original PDF
    2SC5800FB-T1 NEC NPN Silicon RF Transistor for High-frequency Low Noise Flat-lead 3-pin Thin-type Ultra Super Minimold Original PDF
    2SC5800-T1 NEC NPN SILICON RF TRANSISTOR Original PDF

    2SC5800 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5436

    Abstract: 2SC5800 low vce transistor
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA863TS 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 2SC5436 2SC5800 low vce transistor

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA862TD 2SC5435, 2SC5800) 2SC5435 2SC5800 P15685EJ1V0DS

    2SC5800

    Abstract: NESG2046M33 NEC JAPAN IC
    Text: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TD NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor


    Original     		PDF PA869TD NESG2046M33, 2SC5800) S21e2 NESG2046M33 2SC5800 2SC5800 NESG2046M33 NEC JAPAN IC

    9904 120 13843

    Abstract: 2SC5435 2SC5800 nec 4308
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA862TD 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 9904 120 13843 2SC5435 2SC5800 nec 4308

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA862TS 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 PU10332EJ01V0DS

    2SC5436

    Abstract: 2SC5800 uPA863TD-Q2
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA863TD 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 2SC5436 2SC5800 uPA863TD-Q2

    transistor nec 8772

    Abstract: nec 8772 transistor NEC transistor 8772 2SC5800 nec 8772 transistor zo 607 2SC5800-T1 nec 2035 728 8772 nec transistor
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package


    Original     		PDF 2SC5800 2SC5800-T1 transistor nec 8772 nec 8772 transistor NEC transistor 8772 2SC5800 nec 8772 transistor zo 607 2SC5800-T1 nec 2035 728 8772 nec transistor

    MARKING 6260

    Abstract: 2SC5436 2SC5800 P1573 uPA863TC-T1
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: High gain transistor suited for buffer applications


    Original     		PDF PA863TC 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 MARKING 6260 2SC5436 2SC5800 P1573 uPA863TC-T1

    F 0552

    Abstract: PA862T
    Text: NPN SILICON RF TWIN TRANSISTOR PA862TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz


    Original     		PDF PA862TD 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 P15685EJ1V0DS F 0552 PA862T

    2SC5435

    Abstract: 2SC5800
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA862TS 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 2SC5435 2SC5800

    transistor 1201 1203 1205

    Abstract: 2SC5435 2SC5800 marking 5a MARKING 6260
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: High gain transistor suited for buffer applications


    Original     		PDF PA862TC 2SC5435, 2SC5800) S21e2 2SC5435 2SC5800 transistor 1201 1203 1205 2SC5435 2SC5800 marking 5a MARKING 6260

    2SC5800

    Abstract: NESG2046M33
    Text: PRELIMINARY DATA SHEET NPN SILICON + SiGe RF TWIN TRANSISTOR µPA869TS NPN SILICON + SiGe RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE) FEATURES • 2 different built-in transistors (NESG2046M33, 2SC5800) Q1: High gain SiGe transistor


    Original     		PDF PA869TS NESG2046M33, 2SC5800) S21e2 NESG2046M33 2SC5800 2SC5800 NESG2046M33

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA863TS 2SC5436, 2SC5800) 2SC5436 2SC5800 PU10333EJ02V0DS

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA863TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA863TS 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 PU10333EJ01V0DS

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA862TS NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA862TS 2SC5435, 2SC5800) 2SC5435 2SC5800 PU10332EJ02V0DS

    st zo 607

    Abstract: 2SC5436 2SC5800 30614
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR PA863TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor


    Original     		PDF PA863TD 2SC5436, 2SC5800) S21e2 2SC5436 2SC5800 st zo 607 2SC5436 2SC5800 30614

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    6B15

    Abstract: 554-1 2SC5800
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA895TD NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC applications fT = 4.5 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz


    Original     		PDF PA895TD S21e2 2SC5800) 2SC5800 PA873TD PA873TD-T3 6B15 554-1 2SC5800

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SC5436

    Abstract: 2SC5800
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SC5435

    Abstract: 2SC5800 NEC 1357
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PA862TD 2SC5435, 2SC5800 S21e2 2SC5435 PA862TDA862TD P15685JJ1V0DS 2SC5435 2SC5800 NEC 1357

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77