"RF TRANSISTOR" PNP Search Results

"RF TRANSISTOR" PNP Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
2SA1943	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N

"RF TRANSISTOR" PNP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MARKING CODE 16 transistor sot23 Abstract: RF TRANSISTOR ic 556 datasheet pdf for ic 556 CMPTH81 Text: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D	Original	CMPTH81 OT-23 100MHz 20-February MARKING CODE 16 transistor sot23 RF TRANSISTOR ic 556 datasheet pdf for ic 556 CMPTH81	PDF
MARKING CODE 16 transistor sot23 Abstract: CMPTH81 MARKING 16 transistor sot23 RF POWER TRANSISTOR 100MHz Text: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. Marking Code: C3D.	Original	CMPTH81 OT-23 100MHz 16-October MARKING CODE 16 transistor sot23 CMPTH81 MARKING 16 transistor sot23 RF POWER TRANSISTOR 100MHz	PDF
sot-23 MARKING CODE 3d Abstract: marking code 3d Transistor 3D 3D sot23 MARKING CODE 16 transistor sot23 transistor Vbe 3d transistor Text: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. Marking Code is 3D.	Original	CMPTH81 OT-23 100MHz 26-August sot-23 MARKING CODE 3d marking code 3d Transistor 3D 3D sot23 MARKING CODE 16 transistor sot23 transistor Vbe 3d transistor	PDF
Untitled Abstract: No abstract text available Text: Central" CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D	OCR Scan	CMPTH81 OT-23 20-February OT-23	PDF
Untitled Abstract: No abstract text available Text: Central“ CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D	OCR Scan	CMPTH81 1001OV, 100MHz 20-February OT-23 OT-23	PDF
transistor LT 028 Abstract: LT 74 s Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line lc = - 400 mA RF POWER TRANSISTOR PNP SILICON PNP SILICON RF POWER TRANSISTOR . . . d esigned for am plifier, frequency m ultiplier or o scillator a p p li cations in m ilitary and industrial equipm ent. Suitable for use as	OCR Scan	O-205AD transistor LT 028 LT 74 s	PDF
sot-23 MARKING CODE 3d Abstract: 3D marking sot23 r5 rf transistor MARKING CODE 16 transistor sot23 sot-23 Marking 3D TRANSISTOR MARKING 3D c3d TRANSISTOR pnp silicon 3D sot23 Transistor 3d Text: CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications.	Original	CMPTH81 OT-23 100MHz 15-August sot-23 MARKING CODE 3d 3D marking sot23 r5 rf transistor MARKING CODE 16 transistor sot23 sot-23 Marking 3D TRANSISTOR MARKING 3D c3d TRANSISTOR pnp silicon 3D sot23 Transistor 3d	PDF
Untitled Abstract: No abstract text available Text: CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications.	Original	CMPTH81 CMPTH81 OT-23 100MHz 15-August	PDF
RF TRANSISTOR Abstract: ic 556 datasheet CMPTH81 MARKING CODE 16 transistor sot23 sot 23 marking code R4 sot23 marking code 16 Text: CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications.	Original	CMPTH81 CMPTH81 OT-23 oth25 100MHz RF TRANSISTOR ic 556 datasheet MARKING CODE 16 transistor sot23 sot 23 marking code R4 sot23 marking code 16	PDF
RF POWER TRANSISTOR 100MHz Abstract: transistor marking RF transistor case To 92 Text: MPSH81 Central TM Semiconductor Corp. PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSH81 is a PNP Silicon Transistor designed for general purpose RF amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C	Original	MPSH81 100MHz 25-April RF POWER TRANSISTOR 100MHz transistor marking RF transistor case To 92	PDF
AG TRANSISTOR Abstract: Bipolar Junction Transistor siemens power transistor SOT363-Package amplifier siemens sot-363 transistor amplifier siemens bipolar transistor mobile rf power amplifier transistor RF POWER TRANSISTOR NPN Text: Application Note No. 048 Discrete & RF Semiconductors RF-GaAs-PA Drain Switch with Current Recycling This application note describes the usage of the SIEMENS BCP 72 pnp-bipolar junction transistor as drain switch of GaAs RF Power Amplifier stages. The base current of the switching transistor can be recycled to supply the driver	Original	150mV AG TRANSISTOR Bipolar Junction Transistor siemens power transistor SOT363-Package amplifier siemens sot-363 transistor amplifier siemens bipolar transistor mobile rf power amplifier transistor RF POWER TRANSISTOR NPN	PDF
AFY11 Abstract: germanium mesa transistor pnp Germanium Transistor Germanium mesa Text: AFY11 Not for new developm ent PNP Mesa transistor for RF-application The AFY11 is a germanium PNP-RF mesa transistor in a case 5 C 3 DIN 41 873 TO-39 . The collector is electrically connected to the case. AFY11 is designed for universal RF-applications up to about 300 MHz.	OCR Scan	AFY11 AFY11 Q60106 100MHz; germanium mesa transistor pnp Germanium Transistor Germanium mesa	PDF
Untitled Abstract: No abstract text available Text: CP681 PNP - Silicon RF Transistor Die 50mA, 20 Volt w w w. c e n t r a l s e m i . c o m The CP681 is a silicon PNP RF transistor designed for general purpose RF ampliﬁer and mixer applications. MECHANICAL SPECIFICATIONS: Die Size 15 x 15 MILS Die Thickness	Original	CP681 CP681 100MHz	PDF
BD135 Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727 Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics	Original	MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727	PDF

TRANSISTOR SMD Abstract: No abstract text available Text: NTE2401 Silicon PNP Transistor RF Stages in FM Front Ends Description: The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed for use in RF stages in FM front–ends in common base configuration for SMD applications.	Original	NTE2401 NTE2401 100MHz TRANSISTOR SMD	PDF
marking FR PNP SOT323 Abstract: BF824W Text: Philips Semiconductors Product specification PNP RF transistor BF824W FEATURES • S-mini package. H= FI 1 c APPLICATIONS It is especially Intended for RF stages in FM front-ends in common base configuration. Ü» Top view DESCRIPTION PNP transistor in a plastic SOT323	OCR Scan	OT323 BF824W BF824W UAU037 OT323) marking FR PNP SOT323	PDF
Q545 Abstract: SOI series shunt rf transistors amplifier design and matching network HFA3046 HFA3096 HFA3127 HFA3128 high gain PNP RF TRANSISTOR TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.	Original	HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz Q545 SOI series shunt rf transistors amplifier design and matching network HFA3046 HFA3096 HFA3127 high gain PNP RF TRANSISTOR TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ	PDF
2N3553 equivalent Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200 Text: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz	OCR Scan	MM4019 2N3553 MM4019/2N3553 ATC-200 2N3553 equivalent vk-200 ferrite choke vk200* FERROXCUBE VK-200 VK200 MM4019 ATC200	PDF
Untitled Abstract: No abstract text available Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction [ /Title AN93 15.1 /Subject (RF Amplifier Design Using HFA30 46, HFA30 96, HFA31 27, HFA31 28 Transistor Arrays ) /Autho r () /Keywords	Original	HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA30 HFA31 HFA3046/3096/3127/3128	PDF
900mhz-1800mhz rf frequency amplifier circuit Abstract: uhf amplifier design Transistor PNP Transistor Arrays Intersil PNP transistor 263 HFA3046 HFA3096 HFA3127 HFA3128 SOI series shunt Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays TM Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.	Original	HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz 900mhz-1800mhz rf frequency amplifier circuit uhf amplifier design Transistor PNP Transistor Arrays Intersil PNP transistor 263 HFA3046 HFA3096 HFA3127 SOI series shunt	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET	Original	MRF9045MR1 RDMRF9045MR1	PDF
transistor equivalent table 557 Abstract: 21045F Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F	PDF
transistor motorola 114-8 Abstract: MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8 Text: Order this data sheet by MRF861/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF861 NPN Silicon RF Power Transistor M otorola Preferred Device CLASS A 800-960 MHz 27 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier	OCR Scan	MRF861/D 2PHX33727Q-0 transistor motorola 114-8 MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8	PDF
AN9744 Abstract: gilbert cell differential pair GILBERT CELL HFA3101 an-9744 Silicon Bipolar Transistor Q6 sot36 9744 pnp 8 transistor array HFA3046 Text: RF Up/Down Conversion Is Simplified By Linear Arrays Application Note July 1997 AN9744 Linear Arrays Have Advantages Over Discrete Transistors RF RS RL - VS RE FIGURE 1. DISCRETE TRANSISTOR AMPLIFIER The multistage transistor amplifier design shown in Figure 2	Original	AN9744 HFA3101 AN9744 gilbert cell differential pair GILBERT CELL an-9744 Silicon Bipolar Transistor Q6 sot36 9744 pnp 8 transistor array HFA3046	PDF

"RF TRANSISTOR" PNP Search Results

"RF TRANSISTOR" PNP Result Highlights (5)

"RF TRANSISTOR" PNP Datasheets Context Search

MARKING CODE 16 transistor sot23

MARKING CODE 16 transistor sot23

sot-23 MARKING CODE 3d

Untitled

Untitled

transistor LT 028

sot-23 MARKING CODE 3d

Untitled

RF TRANSISTOR

RF POWER TRANSISTOR 100MHz

AG TRANSISTOR

AFY11

Untitled

BD135

TRANSISTOR SMD

marking FR PNP SOT323

Q545

2N3553 equivalent

Untitled

900mhz-1800mhz rf frequency amplifier circuit

Untitled

transistor equivalent table 557

transistor motorola 114-8

AN9744