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    "RF TRANSISTOR" PNP Search Results

    "RF TRANSISTOR" PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096EHVX Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    "RF TRANSISTOR" PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING CODE 16 transistor sot23

    Abstract: RF TRANSISTOR ic 556 datasheet pdf for ic 556 CMPTH81
    Text: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D


    Original     		PDF CMPTH81 OT-23 100MHz 20-February MARKING CODE 16 transistor sot23 RF TRANSISTOR ic 556 datasheet pdf for ic 556 CMPTH81

    MARKING CODE 16 transistor sot23

    Abstract: CMPTH81 MARKING 16 transistor sot23 RF POWER TRANSISTOR 100MHz
    Text: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. Marking Code: C3D.


    Original     		PDF CMPTH81 OT-23 100MHz 16-October MARKING CODE 16 transistor sot23 CMPTH81 MARKING 16 transistor sot23 RF POWER TRANSISTOR 100MHz

    sot-23 MARKING CODE 3d

    Abstract: marking code 3d Transistor 3D 3D sot23 MARKING CODE 16 transistor sot23 transistor Vbe 3d transistor
    Text: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. Marking Code is 3D.


    Original     		PDF CMPTH81 OT-23 100MHz 26-August sot-23 MARKING CODE 3d marking code 3d Transistor 3D 3D sot23 MARKING CODE 16 transistor sot23 transistor Vbe 3d transistor

    sot-23 MARKING CODE 3d

    Abstract: 3D marking sot23 r5 rf transistor MARKING CODE 16 transistor sot23 sot-23 Marking 3D TRANSISTOR MARKING 3D c3d TRANSISTOR pnp silicon 3D sot23 Transistor 3d
    Text: CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications.


    Original     		PDF CMPTH81 OT-23 100MHz 15-August sot-23 MARKING CODE 3d 3D marking sot23 r5 rf transistor MARKING CODE 16 transistor sot23 sot-23 Marking 3D TRANSISTOR MARKING 3D c3d TRANSISTOR pnp silicon 3D sot23 Transistor 3d

    Untitled

    Abstract: No abstract text available
    Text: CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications.


    Original     		PDF CMPTH81 CMPTH81 OT-23 100MHz 15-August

    RF TRANSISTOR

    Abstract: ic 556 datasheet CMPTH81 MARKING CODE 16 transistor sot23 sot 23 marking code R4 sot23 marking code 16
    Text: CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications.


    Original     		PDF CMPTH81 CMPTH81 OT-23 oth25 100MHz RF TRANSISTOR ic 556 datasheet MARKING CODE 16 transistor sot23 sot 23 marking code R4 sot23 marking code 16

    RF POWER TRANSISTOR 100MHz

    Abstract: transistor marking RF transistor case To 92
    Text: MPSH81 Central TM Semiconductor Corp. PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSH81 is a PNP Silicon Transistor designed for general purpose RF amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C


    Original     		PDF MPSH81 100MHz 25-April RF POWER TRANSISTOR 100MHz transistor marking RF transistor case To 92

    AG TRANSISTOR

    Abstract: Bipolar Junction Transistor siemens power transistor SOT363-Package amplifier siemens sot-363 transistor amplifier siemens bipolar transistor mobile rf power amplifier transistor RF POWER TRANSISTOR NPN
    Text: Application Note No. 048 Discrete & RF Semiconductors RF-GaAs-PA Drain Switch with Current Recycling This application note describes the usage of the SIEMENS BCP 72 pnp-bipolar junction transistor as drain switch of GaAs RF Power Amplifier stages. The base current of the switching transistor can be recycled to supply the driver


    Original     		PDF 150mV AG TRANSISTOR Bipolar Junction Transistor siemens power transistor SOT363-Package amplifier siemens sot-363 transistor amplifier siemens bipolar transistor mobile rf power amplifier transistor RF POWER TRANSISTOR NPN

    Untitled

    Abstract: No abstract text available
    Text: CP681 PNP - Silicon RF Transistor Die 50mA, 20 Volt w w w. c e n t r a l s e m i . c o m The CP681 is a silicon PNP RF transistor designed for general purpose RF amplifier and mixer applications. MECHANICAL SPECIFICATIONS: Die Size 15 x 15 MILS Die Thickness


    Original     		PDF CP681 CP681 100MHz

    BD135

    Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
    Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics


    Original     		PDF MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727

    rf transistors amplifier design and matching network

    Abstract: silicon bipolar transistor low noise amplifier bipolar transistor ghz s-parameter intersil AN1503 PNP transistor 263 AN1503 ISL73096RH ISL73127RH ISL73128RH 6 "transistor arrays" ic
    Text: Application Note 1503 RF Amplifier Design Using ISL73096RH, ISL73127RH, ISL73128RH Transistor Arrays Introduction ISL73096RH This application note is focused on exploiting the RF design capabilities of ISL73096RH/ISL73127RH/ ISL73128RH transistor arrays. Detailed design


    Original     		PDF ISL73096RH, ISL73127RH, ISL73128RH ISL73096RH ISL73096RH/ISL73127RH/ 800MHz 2500MHz) 10MHz 600MHz rf transistors amplifier design and matching network silicon bipolar transistor low noise amplifier bipolar transistor ghz s-parameter intersil AN1503 PNP transistor 263 AN1503 ISL73096RH ISL73127RH 6 "transistor arrays" ic

    TRANSISTOR SMD

    Abstract: No abstract text available
    Text: NTE2401 Silicon PNP Transistor RF Stages in FM Front Ends Description: The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed for use in RF stages in FM front–ends in common base configuration for SMD applications.


    Original     		PDF NTE2401 NTE2401 100MHz TRANSISTOR SMD

    Q545

    Abstract: SOI series shunt rf transistors amplifier design and matching network HFA3046 HFA3096 HFA3127 HFA3128 high gain PNP RF TRANSISTOR TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ
    Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz Q545 SOI series shunt rf transistors amplifier design and matching network HFA3046 HFA3096 HFA3127 high gain PNP RF TRANSISTOR TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ

    Untitled

    Abstract: No abstract text available
    Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction [ /Title AN93 15.1 /Subject (RF Amplifier Design Using HFA30 46, HFA30 96, HFA31 27, HFA31 28 Transistor Arrays ) /Autho r () /Keywords


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA30 HFA31 HFA3046/3096/3127/3128

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET


    Original     		PDF MRF9045MR1 RDMRF9045MR1

    transistor equivalent table 557

    Abstract: 21045F
    Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F

    AN9744

    Abstract: gilbert cell differential pair GILBERT CELL HFA3101 an-9744 Silicon Bipolar Transistor Q6 sot36 9744 pnp 8 transistor array HFA3046
    Text: RF Up/Down Conversion Is Simplified By Linear Arrays Application Note July 1997 AN9744 Linear Arrays Have Advantages Over Discrete Transistors RF RS RL - VS RE FIGURE 1. DISCRETE TRANSISTOR AMPLIFIER The multistage transistor amplifier design shown in Figure 2


    Original     		PDF AN9744 HFA3101 AN9744 gilbert cell differential pair GILBERT CELL an-9744 Silicon Bipolar Transistor Q6 sot36 9744 pnp 8 transistor array HFA3046

    Untitled

    Abstract: No abstract text available
    Text: Central" CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold­ ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D


    OCR Scan     		PDF CMPTH81 OT-23 20-February OT-23

    Untitled

    Abstract: No abstract text available
    Text: Central“ CMPTH81 Semiconductor Corp. SURFACE MOUNT PNP SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy mold­ ed in a surface mount package, designed for general RF amplifier applications. MARKING CODE: C3D


    OCR Scan     		PDF CMPTH81 1001OV, 100MHz 20-February OT-23 OT-23

    transistor LT 028

    Abstract: LT 74 s
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line lc = - 400 mA RF POWER TRANSISTOR PNP SILICON PNP SILICON RF POWER TRANSISTOR . . . d esigned for am plifier, frequency m ultiplier or o scillator a p p li­ cations in m ilitary and industrial equipm ent. Suitable for use as


    OCR Scan     		PDF O-205AD transistor LT 028 LT 74 s

    AFY11

    Abstract: germanium mesa transistor pnp Germanium Transistor Germanium mesa
    Text: AFY11 Not for new developm ent PNP Mesa transistor for RF-application The AFY11 is a germanium PNP-RF mesa transistor in a case 5 C 3 DIN 41 873 TO-39 . The collector is electrically connected to the case. AFY11 is designed for universal RF-applications up to about 300 MHz.


    OCR Scan     		PDF AFY11 AFY11 Q60106 100MHz; germanium mesa transistor pnp Germanium Transistor Germanium mesa

    marking FR PNP SOT323

    Abstract: BF824W
    Text: Philips Semiconductors Product specification PNP RF transistor BF824W FEATURES • S-mini package. H= FI 1 c APPLICATIONS It is especially Intended for RF stages in FM front-ends in common base configuration. Ü» Top view DESCRIPTION PNP transistor in a plastic SOT323


    OCR Scan     		PDF OT323 BF824W BF824W UAU037 OT323) marking FR PNP SOT323

    2N3553 equivalent

    Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200
    Text: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz


    OCR Scan     		PDF MM4019 2N3553 MM4019/2N3553 ATC-200 2N3553 equivalent vk-200 ferrite choke vk200* FERROXCUBE VK-200 VK200 MM4019 ATC200

    transistor motorola 114-8

    Abstract: MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8
    Text: Order this data sheet by MRF861/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF861 NPN Silicon RF Power Transistor M otorola Preferred Device CLASS A 800-960 MHz 27 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier


    OCR Scan     		PDF MRF861/D 2PHX33727Q-0 transistor motorola 114-8 MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8