Untitled
Abstract: No abstract text available
Text: BYP53 / BYP54 25A Silicon Power Rectifier Diode Part no. Description The BYP53/54 are plastic sealed 25A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for
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BYP53
BYP54
BYP53/54
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BYP54-800
Abstract: BYP53-800 BYP53 BYP53-75 BYP54 hermetic press-fit diode zetex MARKING CODE
Text: BYP53 / BYP54 25A Silicon Power Rectifier Diode Part no. Description The BYP53/54 are plastic sealed 25A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for
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BYP53
BYP54
BYP53/54
BYP54-800
BYP53-800
BYP53-75
BYP54
hermetic press-fit diode
zetex MARKING CODE
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr IXFB50N80Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFB50N80Q2
300ns
PLUS264
50N80Q2
1-18-10-C
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IXFB50N80Q2
Abstract: 50n80 DS99005D 50N80Q2
Text: IXFB50N80Q2 HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFB50N80Q2
300ns
PLUS264
-55es
50N80Q2
1-18-10-C
IXFB50N80Q2
50n80
DS99005D
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Q-Class IXFN50N80Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings
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IXFN50N80Q2
300ns
OT-227
E153432
50N80Q2
1-18-10-C
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PDF
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IXFN50N80Q2
Abstract: 50N80Q2
Text: IXFN50N80Q2 HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings
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IXFN50N80Q2
300ns
OT-227
E153432
50N80Q2
1-18-10-C
IXFN50N80Q2
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PDF
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sml8030jvr
Abstract: sm 170 380
Text: Illl Vrr r = mi SEM E SML8030JVR LAB S O T -2 2 7 P ackage O utline. 5TH GENERATION MOSFET Dimensions in mm inches 1 1.8 (0 .4 6 3 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) ^DS(on) • • • • 800V 25A 0.300Q Faster Switching
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OCR Scan
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SML8030JVR
OT-227
sml8030jvr
sm 170 380
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PDF
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Untitled
Abstract: No abstract text available
Text: A d v a n ced P o w er Te c h n o l o g y APT8030JVFR 800V ' POWER MOS V 25A 0.300Í2 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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OCR Scan
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APT8030JVFR
OT-227
APT8030JVFR
MIL-STD-750
00A/MS,
OT-227
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PDF
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Untitled
Abstract: No abstract text available
Text: APT8030JVR A dvanced P o w er Te c h n o l o g y 800V 25A 0.300Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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OCR Scan
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APT8030JVR
OT-227
10OA/ps)
MIL-STD-750
OT-227
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PDF
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Untitled
Abstract: No abstract text available
Text: A dvanced P ow er Te c h n o lo g y APT8030JVR 800V ' 25A 0.300Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V'“
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OCR Scan
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APT8030JVR
OT-227
30JVR
MIL-STD-750
00nnH,
OT-227
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PDF
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KK25GB40
Abstract: KK25GB80 PD25GB40 PD25GB80 PE25GB40 PK25GB PK25GB40 PK25GB80
Text: THYRISTOR MODULE PK PD,PE,KK 25GB UL;E76102 M Power Thyristor/Diode Module PK25GB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 800V are available. and electrically isolated mounting base make
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E76102
PK25GB
PK25GB40
PD25GB40
KK25GB40
PE25GB40
PK25GB80
PD25GB80
KK25GB80
PE25Gurrent
PD25GB40
PD25GB80
PE25GB40
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Untitled
Abstract: No abstract text available
Text: APT8030JVFR A dvanced P o w er Te c h n o l o g y 800V POWER MOSV 25A 0.300Í1 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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OCR Scan
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APT8030JVFR
OT-227
MIL-STD-750
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PDF
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K25N120
Abstract: SKW25N120 smps 300W PG-TO-247-3 k25N12
Text: SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter G - SMPS • NPT-Technology offers:
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SKW25N120
40lower
PG-TO-247-3
K25N120
K25N120
SKW25N120
smps 300W
PG-TO-247-3
k25N12
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k25t120
Abstract: ikw25t120 BUP314D 25A 1200V BUP314 1200v 25A to247 PG-TO-247-3 K25-T
Text: IKW25T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D
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IKW25T120
BUP314D
k25t120
ikw25t120
BUP314D
25A 1200V
BUP314
1200v 25A to247
PG-TO-247-3
K25-T
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k25t120
Abstract: No abstract text available
Text: IKW25T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D
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IKW25T120
BUP314D
k25t120
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K25N120
Abstract: Q67040-S4282
Text: SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter G - SMPS • NPT-Technology offers:
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SKW25N120
40lower
SKW25N120
K25N120
Q67040-S4282
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k25t120
Abstract: 1200V BUP314D equivalent
Text: IKW25T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D
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IKW25T120
BUP314D
k25t120
1200V
BUP314D equivalent
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IXFB50N80Q2
Abstract: 50n80 50N80Q2
Text: HiPerFETTM Power MOSFETs IXFB50N80Q2 VDSS = ID25 = RDS on = ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 800V 50A Ω 0.15Ω 300ns PLUS264TM(IXFB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFB50N80Q2
300ns
PLUS264TM
50N80Q2
0-11-07-A
IXFB50N80Q2
50n80
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PDF
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k25t120
Abstract: No abstract text available
Text: IKW25T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D
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IKW25T120
BUP314D
k25t120
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability
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IRGP30B120KD-EP
O-247AD
IRGP30B120KD-E
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035H
Abstract: IRGP30B120KD-E IRGP30B120KD-EP
Text: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability
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IRGP30B120KD-EP
O-247AD
IRGP30B120KD-E
035H
IRGP30B120KD-E
IRGP30B120KD-EP
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IRGP30B120KD-EP
Abstract: ir igbt 1200V 40A 035H IRGP30B120KD-E
Text: PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability
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IRGP30B120KD-EP
O-247AD
IRGP30B120KD-E
IRGP30B120KD-EP
ir igbt 1200V 40A
035H
IRGP30B120KD-E
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PDF
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rs 301-678
Abstract: 1200V 100 A THYRISTOR mkp 10 500v 3 phase thyristor dc drive thyristor 1200v DIODE 0536 phase angle control circuit 2500V. 300A. diodes thyristor controller phase angle trigger module 301-678
Text: Issued March 1991 J6575 Encapsulatedthyristor anddiodepacks A range of encapsulated modules, either thyristor or diode, available in two voltage ratings 800VRRM and 1200V RRM for 250 Vrms and 440 Vrms respectively. The thyristor module is available in five current
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J6575
rs 301-678
1200V 100 A THYRISTOR
mkp 10 500v
3 phase thyristor dc drive
thyristor 1200v
DIODE 0536
phase angle control circuit
2500V. 300A. diodes
thyristor controller
phase angle trigger module 301-678
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PDF
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Untitled
Abstract: No abstract text available
Text: IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT C Features • • • • • • • • VCES = 1200V Low VCE on Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C)
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IRGP30B120KD-EP
O-247AD
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