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    "NOR FLASH" 4MB Search Results

    "NOR FLASH" 4MB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL1G02NX Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), 2-Input/NOR, XSON6, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TN28F010-90 Rochester Electronics LLC 28F010 - 1-Mbit (128k x 8) NOR Flash Memory Visit Rochester Electronics LLC Buy
    TC7SZ02F Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), 2-Input/NOR, SOT-25 (SMV), -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G02FS Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), 2-Input/NOR, SOT-953 (fSV), -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7SZ02FE Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), 2-Input/NOR, SOT-553 (ESV), -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    "NOR FLASH" 4MB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    JS28F128M29EWL

    Abstract: JS28F128M29EWH JS28F128M JS28F128M29EWHF JS28F128M29EW JR28F032M29EWT PC28F128M29EWL JS28F064M29EWXX PZ28F032M29EWHA M29EW
    Text: 32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features • VPP/WP# pin protection


    Original     		128Mb: JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX JS28F128M29EWL JS28F128M29EWH JS28F128M JS28F128M29EWHF JS28F128M29EW JR28F032M29EWT PC28F128M29EWL PZ28F032M29EWHA M29EW PDF

    M29F STMicroelectronics

    Abstract: m29F DATASHEET "NOR Flash" 4MB 256mb flash STMicroelectronics tsop56 TFBGA48 m28w160es TSOP40 Device M29F010B M29W160 nor flash of 4mb
    Text: NOR Flash memories for consumer applications January 2006 www.st.com/flash Outstanding solutions for every requirement The broad and differentiated consumer application market has an ongoing demand for stable and reliable standard NOR Flash devices, in a variety of densities with specific


    Original     		TBGA64 BRFLASHCON0106 M29F STMicroelectronics m29F DATASHEET "NOR Flash" 4MB 256mb flash STMicroelectronics tsop56 TFBGA48 m28w160es TSOP40 Device M29F010B M29W160 nor flash of 4mb PDF

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640GH, M29W640GL M29W640GT, M29W640GB Features • Common Flash interface – 64-bit security code • 128-word extended memory block – Extra block used as security block or to store additional information


    Original     		M29W640GH, M29W640GL M29W640GT, M29W640GB 16-word/32-byte M29W640GH/L M29W640GT/B 09005aef84e35115 640GH/L PDF

    M29W640GT70

    Abstract: micron nor Flash M29W640GT70N3F M29W640GH7 M29W640GL70Z A2112
    Text: 64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640GH, M29W640GL M29W640GT, M29W640GB Features • Common flash interface – 64-bit security code • 128-word extended memory block – Extra block used as security block or to store additional information


    Original     		M29W640GH, M29W640GL M29W640GT, M29W640GB 16-word/32-byte M29W640GH/L M29W640GT/B 09005aef84e35115 640GH/L M29W640GT70 micron nor Flash M29W640GT70N3F M29W640GH7 M29W640GL70Z A2112 PDF

    BA204

    Abstract: ba148 BA238 SAMSUNG MCP BA167 MCP MEMORY BA262 BA259 UtRAM Density BA153
    Text: Preliminary MCP MEMORY KBF0x0800M Document Title Multi-Chip Package MEMORY 128M Bit 8Mx16 Synchronous Burst , Multi Bank NOR Flash *2 / 64M Bit(4Mx16) Synchronous Burst UtRAM *2 Revision History Revision No. History 0.0 Draft Date Initial Draft (128M NOR Flash M-die_rev0.7)


    Original     		KBF0x0800M 8Mx16) 4Mx16) 115-Ball 80x13 BA204 ba148 BA238 SAMSUNG MCP BA167 MCP MEMORY BA262 BA259 UtRAM Density BA153 PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    Atmel part numbering

    Abstract: FBGA48 TFBGA48 te28f320b3bd 49XX TSOP32 Package TE28F320B3TD MBM29F080A tsop48 te28f320c3bd
    Text: Standard NOR Flash family Cross-reference guide September 2005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties


    Original     		CRNORFLASH1005 Atmel part numbering FBGA48 TFBGA48 te28f320b3bd 49XX TSOP32 Package TE28F320B3TD MBM29F080A tsop48 te28f320c3bd PDF

    Untitled

    Abstract: No abstract text available
    Text: 75MHz, Serial Peripheral Interface Flash Memory Features Micron Serial NOR Flash Memory 3V, 4Mb Page Erasable with Byte Alterability M45PE40 Features • • • • • • • • • • • • SPI bus-compatible serial interface 75 MHz clock frequency MAX


    Original     		75MHz, M45PE40 4013h) 09005aef845660fc PDF

    HX8819

    Abstract: Himax TCON HA1202 HX8817 himax tcon HIMAX hx8819 CERAMATE TECHNICAL T-CON 8834
    Text: Ceramate Digital Photo Frame Block 4Mb SDRAM 8Mb NAND Flash Unity OPTO Himax IRM MIM3388 SERIES MIM538B SERIES T-CON HX8817/8834 Bluetooth HAIRERIC or NOR Flash CPT Analog Panel Himax CPT T-CON HX8819/8824/8834 Digital Panel USB I/O ESD Protection CDA12T1G


    Original     		MIM3388 MIM538B HX8817/8834 HX8819/8824/8834 CDA12T1G CP1117 CO4558 CO5532 CO4580 HA1202/1201/1212/1211/1232/1231/1102/1209 HX8819 Himax TCON HA1202 HX8817 himax tcon HIMAX hx8819 CERAMATE TECHNICAL T-CON 8834 PDF

    spartan 3a

    Abstract: 48-pin TSOP Package VO48 XCF02S RELIABILITY REPORT xcf128x XCF32PFS48C Virtex 4 XC4VFX60 XC3S400 XCF02S pcb XCF32P Device Reliability report XILINX
    Text: 48 Platform Flash In-System Programmable Configuration PROMs R DS123 v2.15 July 07, 2008 Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • ♦ 3.3V Supply Voltage Low-Power Advanced CMOS NOR Flash Process


    Original     		DS123 VOG20 spartan 3a 48-pin TSOP Package VO48 XCF02S RELIABILITY REPORT xcf128x XCF32PFS48C Virtex 4 XC4VFX60 XC3S400 XCF02S pcb XCF32P Device Reliability report XILINX PDF

    XCF01S

    Abstract: xcf16pfs XCF32PFS48 DS-121 XCF02S DS123 FS48 VO20 VO48 XCF02S pcb
    Text: <BL Blue> R DS123 v2.11.1 March 30, 2007 Platform Flash In-System Programmable Configuration PROMs Product Specification Features • • In-System Programmable PROMs for Configuration of Xilinx FPGAs ♦ 3.3V supply voltage • Low-Power Advanced CMOS NOR FLASH Process


    Original     		DS123 VOG20 LVCMOS25 XCF01S xcf16pfs XCF32PFS48 DS-121 XCF02S DS123 FS48 VO20 VO48 XCF02S pcb PDF

    SAMSUNG NOR Flash

    Abstract: No abstract text available
    Text: NOR FLASH MEMORY K8S6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		K8S6415ET 00003FH 00007FH 0000BFH 000000H 44-Ball SAMSUNG NOR Flash PDF

    SAMSUNG MCP

    Abstract: KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100
    Text: KBB0xA500M - T402 MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 15, 2002


    Original     		KBB0xA500M 8Mx8/4Mx16) 8Mx16) 4Mx16) 150uA 100uA 200uA 80-Ball 80x12 SAMSUNG MCP KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100 PDF

    BA127 Diode

    Abstract: K8S6415ET BA134 samsung nor flash 3FFF80h-3FFFFFh
    Text: FLASH MEMORY K8S6415ET B B Document Title 64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date 0.0 Initial Issue 1.0 Revision March 22, 2005 - Specification finalized - Add the requirement and note of Quadruple word program operation


    Original     		K8S6415ET 00003FH 00007FH 0000BFH 000000H 44-Ball BA127 Diode BA134 samsung nor flash 3FFF80h-3FFFFFh PDF

    XCF02S

    Abstract: pcb footprint FS48, and FSG48 XCF32P DS123 FS48 VO20 VO48 XCF01S XCF32PVO48C XCF08PFS48C
    Text: R DS123 v2.6 March 14, 2005 4 2 Platform Flash In-System Programmable Configuration PROMS Preliminary Product Specification Features • In-System Programmable PROMs for Configuration of Xilinx FPGAs • Low-Power Advanced CMOS NOR FLASH Process • Endurance of 20,000 Program/Erase Cycles


    Original     		DS123 XCF08P/XCF16P/XCF32P VOG48, FSG48 XCF01S/XCF02S/XCF04S XCF02S pcb footprint FS48, and FSG48 XCF32P DS123 FS48 VO20 VO48 XCF01S XCF32PVO48C XCF08PFS48C PDF

    S25FL256

    Abstract: S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K
    Text: Spansion Product Selector Guide April 2012 Spansion ® Products Portfolio Spansion offers a wide range of NOR Flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including:


    Original     		128Mb 256Mb 512Mb 43715C S25FL256 S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K PDF

    samsung date code decorder

    Abstract: SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp
    Text: KBA0101A0M / KBA0201A0M KBA0301A0M / KBA0401A0M Preliminary MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory *2 / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark


    Original     		KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M 4Mx16) 2Mx16) 512Kx16) LIM-011025 samsung date code decorder SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp PDF

    S25FL129

    Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
    Text: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,


    Original     		128Mb 256Mb 512Mb 1-866-SPANSION 43715B S25FL129 S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K PDF

    pmc flash pm49fl004t-33jc

    Abstract: Pm49FL004T-33JC W39V040FAP winbond w39v040fap winbond bios w39v040ap pmc flash pm49fl002t-33jc W39V040AP ATMEL BIOS AT49lh00b4 PM49FL008T-33JC SST49LF004B-33-4C-NHE
    Text: Flash memory for PC and server BIOS Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties


    Original     		CRMEMBIOS/0304 pmc flash pm49fl004t-33jc Pm49FL004T-33JC W39V040FAP winbond w39v040fap winbond bios w39v040ap pmc flash pm49fl002t-33jc W39V040AP ATMEL BIOS AT49lh00b4 PM49FL008T-33JC SST49LF004B-33-4C-NHE PDF

    BA99

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K8A6415ET B B 64Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K8A6415ET 54MHz A0-A21 00000FH 00001FH 00002FH 000000H BA99 PDF

    M29F800FT

    Abstract: m29f800f M29F400FT M29F160F M29F200FT M29F160FT M29F800 M29F400F M29F200F M29F400FB
    Text: M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • RoHS-compliant packages – TSOP48 – SO44 16Mb not available for this package • Automotive device grade 3


    Original     		M29FxxxFT/B M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B 0x01h M29F200FT: 0x2251 M29F400FT: 0x2223 M29F800FT m29f800f M29F400FT M29F160F M29F200FT M29F160FT M29F800 M29F400F M29F200F M29F400FB PDF

    samsung K5 MCP

    Abstract: SAMSUNG MCP 152x16 Flash Memory SAMSUNG k5 K5A3240YT A3240 A3340 BA5111 BA4410
    Text: Preliminary MCP MEMORY K5A3x40YT B C Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark November 6, 2002 Preliminary


    Original     		K5A3x40YT 4Mx8/2Mx16) 512Kx8/256Kx16) 512KtRDR 69-Ball 08MAX samsung K5 MCP SAMSUNG MCP 152x16 Flash Memory SAMSUNG k5 K5A3240YT A3240 A3340 BA5111 BA4410 PDF

    SAMSUNG MCP

    Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
    Text: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary


    Original     		K5A3x40YT 4Mx8/2Mx16) 512Kx8/256Kx16) 512tRDR 69-Ball 08MAX SAMSUNG MCP samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5 PDF