ATO Solution nand flash
Abstract: No abstract text available
Text: K9S5608V0B/A K9S2808V0B/A K9S6408V0C/B SmartMediaTM Document Title SmartMediaTM Card Revision History History Draft Date Remark 0.0 Initial issue July 17th 2000 0.1 1. Explain how pointer operation works in detail. 2. Updated operation for tRST timing - If reset command FFh is written at Ready state, the device goes
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K9S5608V0B/A
K9S2808V0B/A
K9S6408V0C/B
ATO Solution nand flash
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377H
Abstract: No abstract text available
Text: HANBit HFDOM40S6Rxxx 40Pin Flash Disk Module Min.128MB ~ Max.4G, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S6Rxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM40S6Rxxx
40Pin
128MB
HFDOM40S6Rxxx
HFDOM40S6R-xxx
DOM40S6R128
377H
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Untitled
Abstract: No abstract text available
Text: HANBit HFDOM40S3Vxxx 40Pin Flash Disk Module Min.16MB ~ Max.384MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S3Vxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM40S3Vxxx
40Pin
384MB,
HFDOM40S3Vxxx
HFDOM40S3V-xxx
384MByte
DOM40S3V064
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flash disk
Abstract: SEC130
Text: HANBit HFDOM44S6Rxxx 44Pin Flash Disk Module Min.128MB ~ Max.4G, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S6Rxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM44S6Rxxx
44Pin
128MB
HFDOM44S6Rxxx
HFDOM44S6R-xxx
DOM44S6R128
flash disk
SEC130
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Untitled
Abstract: No abstract text available
Text: HANBit HFDOM44S6Vxxx 44Pin Flash Disk Module Min.128MB ~ Max.3GB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S6Vxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM44S6Vxxx
44Pin
128MB
HFDOM44S6Vxxx
HFDOM44S6V-xxx
seri2005)
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Untitled
Abstract: No abstract text available
Text: HANBit HFDOM44S3Vxxx 44Pin Flash Disk Module Min.16MB ~ Max.384MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S3Vxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM44S3Vxxx
44Pin
384MB,
HFDOM44S3Vxxx
HFDOM44S3V-xxx
384MByte
48Mbyte
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Untitled
Abstract: No abstract text available
Text: HANBit HFDOM40S3Rxxx 40Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S3Rxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM40S3Rxxx
40Pin
512MB,
HFDOM40S3Rxxx
HFDOM40S3R-xxx
512MByte
DOM40S3R128
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2Gbyte NAND flash
Abstract: No abstract text available
Text: HANBit HFDOM40S6Vxxx 40Pin Flash Disk Module Min.128MB ~ Max.3GB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S6Vxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM40S6Vxxx
40Pin
128MB
HFDOM40S6Vxxx
HFDOM40S3V-xxx
2Gbyte NAND flash
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Untitled
Abstract: No abstract text available
Text: HANBit HFDOM44S3Rxxx 44Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S3Rxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM44S3Rxxx
44Pin
512MB,
HFDOM44S3Rxxx
HFDOM44S3R-xxx
512MByte
DOM44S3R128
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K4D623237A-QC70
Abstract: No abstract text available
Text: 64M DDR SDRAM K4D623237A 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and without DLL Revision 1.2 February 2001 Samsung Electronics reserves the right to change products or specification without notice.
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K4D623237A
64Mbit
32Bit
K4D623237A-QC50
K4D623237A-*
K4D623237A-QC70
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qualcomm nand
Abstract: KBE00500AM-D437 SAMSUNG MCP KBE00500AM NAND FLASH DDP MCP Specification UtRAM Density 2gb nand mcp 137FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability
Text: Target MCP MEMORY KBE00500AM-D437 MCP Specification 1Gb NAND Flash Memory * 2 + 512Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KBE00500AM-D437
512Mb
KBE00500AM-D437
SG2002063-01
qualcomm nand
SAMSUNG MCP
KBE00500AM
NAND FLASH DDP
MCP Specification
UtRAM Density
2gb nand mcp
137FBGA
SAMSUNG 256Mb NAND Flash Qualification Reliability
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K4N56163QF
Abstract: No abstract text available
Text: Date : April 8 , 2005 Application Application Note Note Clock frequency change sequence Product : K4N56163QF Product Planning & Application Eng.Team Memory Technology & Product Division Samsung Electronics Co., Ltd San #16 Banwol-Ri, Taean-Eup Hwasung-City, Kyungki-Do, Korea R.O.K
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K4N56163QF
K4N56163QF.
K4N56163QF
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K4D62323HA
Abstract: No abstract text available
Text: 64M DDR SDRAM K4D62323HA 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 1.0 August 2000 Samsung Electronics reserves the right to change products or specification without notice. - 1 -
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K4D62323HA
64Mbit
32Bit
K4D62323HA-*
K4D62323HA
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MCP 67 MV- A2
Abstract: K5D1G13ACD SAMSUNG MCP MCP MEMORY K5D1G K5D1G1 K5D1G13 SAMSUNG MCP Qualification Report 137FBGA k5d1g13a
Text: Target K5D1G13ACD-D075 MCP MEMORY MCP Specification 1Gb NAND Flash + 512Mb Mobile SDRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K5D1G13ACD-D075
512Mb
K5D1G13ACD-D075000
SG2002063-01
MCP 67 MV- A2
K5D1G13ACD
SAMSUNG MCP
MCP MEMORY
K5D1G
K5D1G1
K5D1G13
SAMSUNG MCP Qualification Report
137FBGA
k5d1g13a
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DINA 6
Abstract: No abstract text available
Text: DDP 512Mb x8 DDR SDRAM DDR SDRAM Specification Version 0.0 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as
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512Mb
31/VREF-0
DINA 6
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Untitled
Abstract: No abstract text available
Text: 64M DDR SDRAM K4D62323HA 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL Revision 1.1 February 2001 Samsung Electronics reserves the right to change products or specification without notice.
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K4D62323HA
64Mbit
32Bit
K4D62323HA-QC50
K4D62323HA-*
4Mx32
2Mx32
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K4D55323
Abstract: K4D55323QF X321
Text: Date : March 18 , 2005 Application Application Note Note Clock frequency change sequence Product : K4J55323QF/K4D55323QF Product Planning & Application Eng.Team Memory Technology & Product Division Samsung Electronics Co., Ltd San #16 Banwol-Ri, Taean-Eup
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K4J55323QF/K4D55323QF
K4J55323QF
K4D55323QF.
K4D55323
K4D55323QF
X321
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KM432D2131TQ-G0
Abstract: KM432D2131TQ-G6 KM432D2131TQ-G7 KM432D2131TQ-G8 1328G
Text: Target 64M DDR SGRAM KM432D2131 64Mbit DDR SGRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous Graphic RAM with Bi-directional Data Strobe Revision 0.3 May 1999 Samsung Electronics reserves the right to change products or specification without notice.
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KM432D2131
64Mbit
32Bit
KM432D2131TQ-G0
KM432D2131TQ-G6
KM432D2131TQ-G7
KM432D2131TQ-G8
1328G
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Untitled
Abstract: No abstract text available
Text: DEVICE OPERATIONS CMOS SDRAM SDRAM Device Operations * Samsung Electronics reserves the right to change products or specification without notice. ELECTRONICS DEVICE OPERATIONS CMOS SDRAM A. MODE REGISTER FIELD TABLE TO PROGRAM MODES Register Programmed with MRS
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A10/AP
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KM432D5131TQ-G7
Abstract: KM432D5131TQ-G8 KM432D5131TQ-G0
Text: 16M DDR SGRAM KM432D5131 16Mbit DDR SGRAM 128K x 32Bit x 4 Banks Double Data Rate Synchronous Graphic RAM with Bi-directional Data Strobe Revision 1.1 December 1998 Samsung Electronics reserves the right to change products or specification without notice.
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KM432D5131
16Mbit
32Bit
125MHz
143MHz/125MHz,
100MHz
KM432D5131TQ-G7
KM432D5131TQ-G8
KM432D5131TQ-G0
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DA65
Abstract: K4D263238M-QC40 K4D263238 K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60
Text: Target 128M DDR SDRAM K4D263238M 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Revision 0.3 June 2000 Samsung Electronics reserves the right to change products or specification without notice.
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K4D263238M
128Mbit
32Bit
250MHz
DA65
K4D263238M-QC40
K4D263238
K4D263238M
K4D263238M-QC45
K4D263238M-QC50
K4D263238M-QC55
K4D263238M-QC60
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153-FBGA
Abstract: 153FBGA 153Ball FBGA samsung "nand flash" derating MCP LPDDR 1Gb 512Mb K522H1HACF-B050 k522h1 MCP 256M nand samsung mobile DDR MCP 1Gb nand 512mb dram 130 2gb nand mcp
Text: Rev. 1.0, Oct. 2010 K522H1HACF-B050 MCP Specification 2Gb 128M x16 NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K522H1HACF-B050
A10/AP
153-FBGA
153FBGA
153Ball FBGA
samsung "nand flash" derating
MCP LPDDR 1Gb 512Mb
K522H1HACF-B050
k522h1
MCP 256M nand samsung mobile DDR
MCP 1Gb nand 512mb dram 130
2gb nand mcp
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bc4 bl4 bl8 otf
Abstract: srt 8n TI ddr3 controller "DDR3 SDRAM" TI ddr3 controller datasheet T145
Text: DDR3 SDRAM Device Operation DDR3 SDRAM DDR3 SDRAM Specification Device Operation & Timing Diagram February 2009 revision 0.63 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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SAMSUNG MCP
Abstract: 1g nand mcp KBE00S003M-D411 KBE00S003M Flash MCp nand DRAM 107-ball MCP NOR FLASH SDRAM samsung "nor flash" sensing MCP MEMORY UtRAM Density MCP 1Gb nand 512mb dram 130
Text: KBE00S003M-D411 MCP MEMORY MCP Specification 1Gb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KBE00S003M-D411
256Mb
107-Ball
80x13
SAMSUNG MCP
1g nand mcp
KBE00S003M-D411
KBE00S003M
Flash MCp nand DRAM 107-ball
MCP NOR FLASH SDRAM
samsung "nor flash" sensing
MCP MEMORY
UtRAM Density
MCP 1Gb nand 512mb dram 130
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