DSA2IH00206657.pdf

Manufacturer Not Available
Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (C-Band) Features · Low in te rm o d u la tio n d is to rtio n - IM 3 = -44 d B c a t Po = 28 d B m , - S in g le
Datasheet Type Scan
ECAD Model

DSA2IH00206657.pdf preview Download Datasheet