MW5108
Abstract: TIM7785-8L
Text: TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain
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TIM7785-8L
2-11D1B)
MW51080196
TIM7785-8L
MW5108
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • H i g h power - P-|dB = 39 dBm at 7.7 GHz to 8.5 GHz
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TIM7785-8L
MW51080196
TIM7785-8L
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MW5108
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -44 d B c a t Po = 28 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 39 d B m a t 7.7 G H z to 8.5 G H z
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OCR Scan
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PDF
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TIM7785-8L
MW51080196
7785-8L
MW5108
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