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DSA00481152.pdf
Manufacturer
IXYS
Partial File Text
DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS Test Conditions VDSS TJ = 25°C to 150°C 100 VDGR TJ = 25°C to 150°
Datasheet Type
Original
ECAD Model
Part Details
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101N09A
DE150-101N09A
nec 2401
PIN diode SPICE model