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    DSACRA00007859.pdf

    • Mitsubishi
    • < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifier
    • Original
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    DSACRA00007859.pdf preview Download Datasheet

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    GD-32 HEMT marking K low noise Micro-X marking "K" MGF4963B MGF4963BL

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