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DSA0096352.pdf
Manufacturer
Toshiba
Partial File Text
TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (C-Band) Features ยท Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carri
Datasheet Type
Original
ECAD Model
Part Details
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User Tagged Keywords
MW5108
TIM7785-8L