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    DSAUD0056160.pdf

    • IXYS
    • Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = 3000V IC110 = 28A VCE(sat) 3.2V (Electrically Isolated Tab) ISOPL
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    DSAUD0056160.pdf preview Download Datasheet

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    55N300 IXBF55N300

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