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    DSASW00214386.pdf

    • IXYS
    • DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications VDSS VDSS TJ = 25°C to 150°C 100 V
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    DSASW00214386.pdf preview Download Datasheet

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