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    Scans-00104841.pdf

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    • Insulated-Gate Bipolar Transistors IGT6D11, IGT6E11 File Number 2126 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors TERMINAL DIAGRAM 10A, 400V and 500V Tds (o
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    GE 639 transistor IGT6D11 IGT6E11
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