DSAFRAZ0023001.pdf

Manufacturer Advanced Power Technology
Partial File Text MRF951 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Fully Implanted Base and Emitter Structure. · High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz · Low Noise F
Type Original
Alternative Parts
MRF951 MRF951
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