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DSAXX0017136.pdf
Manufacturer
Cree
Partial File Text
CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die MOSFET Features · · · · · · = 1200 V RDS(on) Qg = 80 m = 90.8 nC Package D D Indu
Type
Original
ECAD Model
Part Details
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gate drive pulse transformer Gate Drive Characteristics Requirements
MOSFET 20a 800v
MOSFET 800V 10A
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