The Datasheet Archive
Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
Search
DSA00153674.pdf
Manufacturer
Cree
Partial File Text
CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree's CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length
Type
Original
ECAD Model
Part Details
Part pricing, stock, data attributes from Findchips.com
DSA00153674.pdf preview
Download Datasheet
User Tagged Keywords
CGHV1J006D
cree gate resistor
G40V4
hemt .s2p
high power transistor s-parameters
Price & Stock Powered by
Findchips