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    • TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET TPMl 617-8 FEATURES: ■ HIGH POWER PldB ~ 39.5 dBm at 1.6 GHz to 1.7GHz ■ HIGH GAIN GldB = 13 dBat 1.6 GHz to 1.7
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    TPM1617 TPM1617-8
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