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    DSAFRAZ0023550.pdf

    • Toshiba
    • 2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2386 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) ·
    • Original
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    DSAFRAZ0023550.pdf preview Download Datasheet

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    2SB1557 2SD2386 D2386

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