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DASF0036553.pdf
Manufacturer
Infineon Technologies
Partial File Text
BSC190N12NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 120 V · N-channel, normal level R DS(on),max 19 m · Excellent gate charge x R DS(on) product (
Type
Original
ECAD Model
Part Details
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User Tagged Keywords
190N12NS
IEC61249-2-21
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