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    190N12NS Search Results

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    190N12NS Price and Stock

    Infineon Technologies AG BSC190N12NS3GATMA1

    MOSFET N-CH 120V 8.6A/44A TDSON
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    DigiKey BSC190N12NS3GATMA1 Reel 15,000 5,000
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    BSC190N12NS3GATMA1 Cut Tape 5,248 1
    • 1 $1.94
    • 10 $1.236
    • 100 $0.8345
    • 1000 $0.60695
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    BSC190N12NS3GATMA1 Digi-Reel 1
    • 1 $1.94
    • 10 $1.236
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    • 1000 $0.60695
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    Avnet Americas BSC190N12NS3GATMA1 Ammo Pack 17 Weeks, 3 Days 1
    • 1 $1.76
    • 10 $1.46
    • 100 $1.15
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    Newark BSC190N12NS3GATMA1 Cut Tape 879 1
    • 1 $0.715
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    • 1000 $0.655
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    BSC190N12NS3GATMA1 Reel 5,000
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    Chip1Stop BSC190N12NS3GATMA1 Cut Tape 14,964
    • 1 $0.629
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    BSC190N12NS3GATMA1 1,489
    • 1 $1.08
    • 10 $0.8696
    • 100 $0.742
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    EBV Elektronik BSC190N12NS3GATMA1 5,000 19 Weeks 5,000
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    New Advantage Corporation BSC190N12NS3GATMA1 5,000 1
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    Infineon Technologies AG BSC190N12NS3GXT

    Trans MOSFET N-CH 120V 8.6A 8-Pin TDSON EP - Tape and Reel (Alt: BSC190N12NS3GATMA1)
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    Avnet Americas BSC190N12NS3GXT Reel 18 Weeks 5,000
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    Infineon Technologies AG BSC190N12NS3 G

    MOSFETs N-Ch 120V 44A TDSON-8 OptiMOS 3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BSC190N12NS3 G 26,996
    • 1 $1.58
    • 10 $1.16
    • 100 $0.835
    • 1000 $0.561
    • 10000 $0.519
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    190N12NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode d39

    Abstract: d39 marking 190N12NS IEC61249-2-21 JESD22
    Text: 190N12NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS 120 V • N-channel, normal level R DS on ,max 19 mΩ • Excellent gate charge x R DS(on) product (FOM) ID 44 A • Very low on-resistance R DS(on) PG-TDSON-8 • 150 °C operating temperature


    Original     		PDF BSC190N12NS3 IEC61249-2-21 190N12NS diode d39 d39 marking 190N12NS IEC61249-2-21 JESD22

    JESD22

    Abstract: 190N12NS diode d39
    Text: 190N12NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 19 mΩ ID 44 A • Very low on-resistance R DS(on) • 150 °C operating temperature


    Original     		PDF BSC190N12NS3 190N12NS JESD22 190N12NS diode d39