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    DSAE0011951.pdf

    • Infineon Technologies
    • PTF191601E PTF191601F Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930 ­ 1990 MHz Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM
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    DSAE0011951.pdf preview Download Datasheet

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