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DSA00543129.pdf
Manufacturer
ON Semiconductor
Partial File Text
NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protect
Type
Original
ECAD Model
Part Details
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User Tagged Keywords
418B-04
GB8206