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DSA00372260.pdf
Manufacturer
Infineon Technologies
Partial File Text
Advance Information PTF191601 LDMOS RF Power Field Effect Transistor 160 W, 1930 1990 MHz Description Features The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM an
Datasheet Type
Original
ECAD Model
Part Details
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PTF191601
PTF191601E
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