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    DSA00124599.pdf

    • ON Semiconductor
    • MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal­to­silicon power diode. State­of­the­art geometry features epitaxial construct
    • Original
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    DSA00124599.pdf preview Download Datasheet

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    B3100 MBR3100 MBR3100RL
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