DSA00261083.pdf
- Fujitsu
- FLR016XP, FLR016XV GaAs FET and HEMT Chips FEATURES · High Output Power: P1dB = 20.0dBm(Typ.) · High Gain: G1dB = 8.0dB(Typ.)(FLR016XP) G1dB = 9.0dB(Typ.)(FLR016XV) · High PAE: hadd = 25%(Typ.)(FLR
- Original
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