Flr016xp
Abstract: FLR016XV GaAs FET HEMT Chips
Text: FLR016XP, FLR016XV GaAs FET and HEMT Chips FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.)(FLR016XP) NOT Drain G1dB = 9.0dB(Typ.)(FLR016XV) • High PAE: hadd = 25%(Typ.)(FLR016XP) REC OM Source hadd = 26%(Typ.)(FLR016XV)
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FLR016XP,
FLR016XV
FLR016XP)
FLR016XV)
FLR016XV
Flr016xp
GaAs FET HEMT Chips
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Untitled
Abstract: No abstract text available
Text: FLR016XP, FLR016XV m ïm :il GaAs F E T and H E M T Chips fU J Ilb U FEATURES • High Output Power: P-|<jB = 20.0dBm Typ. • High Gain: G ^ b = 8.0dB(Typ.)(FLR016XP) G 1dB = 9.0dB(Typ.)(FLR016XV) • High PAE: = 25%(Typ.)(FLR016XP) il add = 26%(Typ.)(FLR016XV)
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FLR016XP,
FLR016XV
FLR016XP)
FLR016XV)
FLR016XV
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et 1103
Abstract: Flr016xp
Text: FLR016XP, F LR 016X V GaAs F ET a n d H E M T Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25°C Item Symbol Saturated Drain Current Test Conditions ID SS - 60 90 mA - 30 - mS -1.0 -2.0 -3.5 V -4 - - V 19 20 - dBm 7.0 8.0 - dB - 25 - % 19 20 -
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FLR016XP,
18GHz
FLR016XP
FLR016XV
et 1103
Flr016xp
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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