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    DSAE0023826.pdf

    • Toshiba
    • 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications ยท Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max)
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    DSAE0023826.pdf preview Download Datasheet

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    2SA1451A 2SC3709A C3709A
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