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DSA00428999.pdf
Manufacturer
Toshiba
Partial File Text
GT10J312,GT10J312(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-ge
Type
Original
ECAD Model
Part Details
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10j312
GT10J312
marking code SM diode