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DSA00208031.pdf
Manufacturer
IXYS
Partial File Text
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = 1700V IC90 = 42A VCE(sat) 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ra
Datasheet Type
Original
ECAD Model
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IXBH42N170
IXBT42N170
siemens ups b42
transistor 537 b 360
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