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    DSA00203638.pdf

    • IXYS
    • Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 6N170 IXBT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C
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    6N170 DS99004 smd diode 819 to-268 TRANSISTOR 610 smd
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