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Scans-00143361.pdf
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SSS6N60/55 N-CHANNEL POWER MOSFETS FEATURES ⢠Lower Rds<on) ⢠Improved inductive ruggedness ⢠Fast switching times ⢠Rugged polysilicon gate cell structure ⢠Lower input capacitan
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ECAD Model
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n-channel 600 volts
SS64N55
SSS6N55
SSS6N60