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Scans-0079614.pdf
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3DE D T^S^a? 0D30116 4 SGS-THOMSON S 6 S-THOMSON BUZ11 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 170x170 mils METALLIZATION: Top Al Back Au/Cr/Ni/Au BA
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BUZ11