DSA00377200.pdf by Panasonic

Partial File Text Infrared Light Emitting Diodes LNA2903L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 Features 7.65±0.2 High-power output, high-efficiency : Ie = 9 mW/sr (min.) 1.0 Not so
Datasheet Type Original
RoHS Yes
Pb Free Yes
Lifecycle Obsolete
Price & Stock
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GaAs 1000 nm Infrared Emitting Diode infrared diode LN2903L LNA2903L