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    GaAs 1000 nm Infrared Emitting Diode

    Abstract: infrared diode LNA2903L LN2903L
    Text: Infrared Light Emitting Diodes LNA2903L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency : Ie = 9 mW/sr min. 1.0 For optical control systems Good radiant power output linearity with respect to input current


    Original     		LNA2903L LN2903L GaAs 1000 nm Infrared Emitting Diode infrared diode LNA2903L LN2903L PDF