DSA00378531.pdf by Intersil

Partial File Text RFP4N05, RFP4N06 June 1999 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs 2880.2 Features These are N-Channel enhancement mode silicon gate power field effect transistors designed
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AN7254 AN7260 RFP4N05 RFP4N06 TB334