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DSA2IH0074231.pdf
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Low V CE(sat) IGBT with Diode IXGP12N60U1 V CES CE(sat) = 600 V = 24 A = 2.5 V Symbol Test Conditions T j = 2 5 °C to 150C C Tj = 25°C to 150°C; RQ E = 1 MQ Continuous T ransient Tc =
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1XGP12N6