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    1XGP12N6

    Abstract: No abstract text available
    Text: Low V CE sat IGBT with Diode IXGP12N60U1 V CES CE(sat) Symbol Test Conditions v CES T j = 2 5 °C to 150CC 600 V V COR Tj = 25°C to 150°C; RQE = 1 MQ 600 V v GES Continuous ±20 V v GEM T ransient ±30 V ^C2S Tc = 25”C 24 A Maximum Ratings Tc = 90”C


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    PDF IXGP12N60U1 T0-220 B2-27 XOP12N60U1 B2-28 1XGP12N6