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    DSARS0014769.pdf

    • Renesas Electronics
    • Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0300 Rev.3.00 Sep 09, 2011 Silicon N-Channel MOS FET Features High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% (f = 520 MHz)
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