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    DSAE0013613.pdf by Infineon Technologies

    • IPB34CN10N G IPI35CN10N G OptiMOS®2 Power-Transistor IPD33CN10N G IPP35CN10N G Product Summary Features V DS 33 m ID · Excellent gate charge x R DS(on) product (FOM) V
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    33CN10N IPP35CN10N
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