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    DSA009090.pdf by Harris Semiconductor

    • FSYC9160D, FSYC9160R Semiconductor Radiation Hardened, SEGR Resistant P-Channel Power MO... SFETs July 1998 Features Description · 47A, -100V, rDS(ON) = 0.053 The Discrete Products more
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    FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1 Rad hard MOSFETS in Harris
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