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DSARS006217.pdf
by Toshiba
Partial File Text
HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application HN2S01FU is composed of 3 independent diodes. Low reverse cur
Datasheet Type
Original
RoHS
Yes
Pb Free
No
Lifecycle
Active
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