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    HN2S01FU Price and Stock

    Toshiba America Electronic Components HN2S01FUTE85LF

    DIODE ARR SCHOTT 10V 100MA US6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HN2S01FUTE85LF Reel 9,000 3,000
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    • 10000 $0.07519
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    HN2S01FUTE85LF Cut Tape 3,445 1
    • 1 $0.39
    • 10 $0.279
    • 100 $0.1407
    • 1000 $0.09702
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    HN2S01FUTE85LF Digi-Reel 1
    • 1 $0.39
    • 10 $0.279
    • 100 $0.1407
    • 1000 $0.09702
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    Mouser Electronics HN2S01FUTE85LF 11,660
    • 1 $0.39
    • 10 $0.279
    • 100 $0.125
    • 1000 $0.097
    • 10000 $0.075
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    Toshiba America Electronic Components HN2S01FU(TE85L,F)

    Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R
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    Verical HN2S01FU(TE85L,F) 1,609 234
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    TME HN2S01FU(TE85L,F) 3
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    • 10 $0.246
    • 100 $0.195
    • 1000 $0.175
    • 10000 $0.164
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    Chip1Stop HN2S01FU(TE85L,F) Cut Tape 1,609
    • 1 -
    • 10 $0.218
    • 100 $0.151
    • 1000 $0.125
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    HN2S01FU Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HN2S01FU Toshiba Diode, Low Voltage High Speed Switching Application Original PDF
    HN2S01FU Toshiba Diode Silicon Epitaxial Schottky Barrier Type Scan PDF
    HN2S01FU Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS) Scan PDF
    HN2S01FU(T5L,F,T) Toshiba HN2S01FU - Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R Original PDF
    HN2S01FU(TE85L,F) Toshiba HN2S01FU - Diode Small Signal Schottky 15V 0.2A 6-Pin US T/R Original PDF
    HN2S01FUTE85LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 10V 100MA US6 Original PDF

    HN2S01FU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HN2S01FU

    Abstract: No abstract text available
    Text: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application z HN2S01FU is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN2S01FU HN2S01FU

    Untitled

    Abstract: No abstract text available
    Text: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application z HN2S01FU is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN2S01FU HN2S01FU

    HN2S01FU

    Abstract: No abstract text available
    Text: HN2S01FU 東芝ダイオード シリコンエピタキシャルショットキバリア形 HN2S01FU ○ 低電圧高速スイッチング用 単位: mm z 独立した 3 個の SBD を搭載 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA 絶対最大定格 (Ta = 25°C)


    Original     		PDF HN2S01FU 100mA HN2S01FU

    Power DIODES, toshiba

    Abstract: HN2S01FU
    Text: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application l HN2S01FU is composed of 3 independent diodes. l Low reverse current: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°°C)


    Original     		PDF HN2S01FU HN2S01FU Power DIODES, toshiba

    HN2S01FU

    Abstract: No abstract text available
    Text: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application HN2S01FU is composed of 3 independent diodes. Low reverse current: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°°C) Characteristic


    Original     		PDF HN2S01FU HN2S01FU

    HN2S01FU

    Abstract: No abstract text available
    Text: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application z HN2S01FU is composed of 3 independent diodes. z Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN2S01FU HN2S01FU

    Untitled

    Abstract: No abstract text available
    Text: HN2S01FU TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Unit: mm Low Voltage High Speed Switching Application HN2S01FU is composed of 3 independent diodes. Low reverse current: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN2S01FU HN2S01FU

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    CMZB220

    Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
    Text: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード


    Original     		PDF SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B

    HN4C06J

    Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
    Text: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2


    Original     		PDF

    CMG03

    Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF SCE0004I TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 CMG03 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01

    2fu smd transistor

    Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B

    2fu smd transistor

    Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
    Text: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR


    Original     		PDF TC55V1001ASTI/ASRI TC55V2001STI/SRI TC55V020FT/TR TC55V2161FTI TC55V200FT/TR TC55V040FT/TR TC55V400FT/TR TC58VT TC75S55FU 2fu smd transistor Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT

    DF2S3.6SC

    Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS
    Text: 東芝半導体製品総覧表 2010 年 1 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 DF2S3.6SC CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS

    HN2S01

    Abstract: No abstract text available
    Text: TO SHIB A HN2S01FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 7 H N < ; n i F h LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION U nit in mm 2.1 ± 0 . • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage 1.25 + 0.1 -H : Vjr = 0.23V TYP. @Ip = 5mA


    OCR Scan     		PDF HN2S01FU HN2S01F 100mA HN2S01

    HN2S01F

    Abstract: HN2S01FU 12T1
    Text: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION U nit in mm 2.1 ± 0.1 • HN2S01F is composed of 3 independent diodes. • Low Forward Voltage 1.25 ±0.1 : VF = 0.23V TYP. @IF = 5mA


    OCR Scan     		PDF HN2S01 HN2S01FU HN2S01F HN2S01FU 12T1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING APPLICATION • • 2.1 ± 0.1 HN2S01F is composed of 3 independent diodes. Low Forward Voltage : VF = 0.23V TYP. @Ijr = 5mA


    OCR Scan     		PDF HN2S01 HN2S01F 100mA HN2S01FU