DSA00428695.pdf by Toshiba

Partial File Text 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications Unit: mm · Low collector saturation voltage: VCE (sat) = 0.4 V (max)
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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2SA1451A 2SC3709A C3709 C3709A