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    DSAIHSC000133078.pdf

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    • FLR016FH FUJITSU K-Band Power GaAs FETs FEATURES • High Output Power: P-|<jB = 20.0dBm(Typ.) • High Gain: G-j^B = 8.5dB(Typ.) • High PAE: r iadd = 26%(Typ.) • Proven Reliability
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