FLR016FH Search Results

FLR016FH Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FLR016FH		Unknown	High Frequency Device Data Book (Japanese)		Scan	PDF
FLR016FH		Unknown	FET Data Book		Scan	PDF

FLR016FH Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FLR016FH Abstract: fujitsu gaas fet Text: FLR016FH K-Band Power GaAs FETs FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Gain: G1dB = 8.5dB(Typ.) N• High PAE: hadd = 26%(Typ.) O T • Proven Reliability REC OM DESCRIPTION ME FET that is designed for The FLR016FH chip is a power GaAs N	Original	FLR016FH FLR016FH 12MAG fujitsu gaas fet	PDF
FLR016FH Abstract: No abstract text available Text: FLR016FH FUJITSU K-Band Power GaAs FETs FEATURES • High Output Power: P-\|<jB = 20.0dBm Typ. • High Gain: G-j^B = 8.5dB(Typ.) • High PAE: r iadd = 26%(Typ.) • Proven Reliability DESCRIPTION The FLR016FH chip is a power GaAs FET that is designed for	OCR Scan	FLR016FH FLR016FH	PDF
Untitled Abstract: No abstract text available Text: FLR016FH K - B a n d Power GaAs FE i s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Condition Item Rating Unit Drain-Source Voltage vds 12 V Gate-Source Voltage vgs -4 V 1.0 w °c °c 1013! rO W B i UtSSipflwlOit Tc = 25°C Pt Storage Temperature	OCR Scan	FLR016FH 3000Q.	PDF
FLR024FH Abstract: FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014XP FLR014FH FSC10FA FLR056XV Text: - 138 - S £ tt € m & i* » f t ; ht * * m £ V P d /P c h 1 * * m K V * (V) (A) * * (W> Ig s s (max) (A) Vg s (V) (min) (A) % (max) V d s (A) (V) ft ¡8 fé (min) (V) (max) V d s (V) (V) (Ta=25°C) (min) (S) Id (A) Vd s (V) Id (A) .2.2 FLM7785-8C/D	OCR Scan	FLM7785-8C/D FLM8596-4C FLM8596-8C FLR014FH FLR014XP FLC311MG-4 FLS31ME 36dBm, FLS50 FLR024FH FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014FH FSC10FA FLR056XV	PDF
FMC141401-02 Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1 Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking	OCR Scan		PDF
FLK202MH-14 Abstract: FLK052WG Text: S E MIC POWER GaAs FETs Electrical Characteristics Ta = 25°C Plc» TYP. <tB) G id B TYP. (dB) Tladd TYP. (dB) f (GHz ) VDS (V) DS <mA) Bth TYP. (°C/W) Package Type FLX102MH-12* 30.0 7.5 33 12.5 10 240 15 MH FLX2Ó2MH-12* 32.5 7.0 28 12.5 10 480 10 MH	OCR Scan	FLX102MH-12* 2MH-12* FLK012W FLK022W FLK052W FLK102MH-14* FLK202MH-14* FLR016FH FLR026FH FLK202MH-14 FLK052WG	PDF