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DSA0065170.pdf
by Cree
Partial File Text
PRELIMINARY CGH21120F 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree's CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high eff
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Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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amplifier circuit
ATC600F
ATC600S
CGH2112
CGH21120
CGH21120F
CGH21120F-TB
RO4350