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DSA00341956.pdf
by ON Semiconductor
Partial File Text
MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construct
Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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DSA00341956.pdf
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User Tagged Keywords
B3100
DIODE mbr3100
MBR3100
MBR3100RL
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