DSA00588995.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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rjp30 rjp30H rjp30h1 RJP30H1DPP RJP30H1DPP-M0

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