DSAFRAZ0023550.pdf by Toshiba

Partial File Text 2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2386 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) ·
Datasheet Type Original
RoHS No
Pb Free No
Lifecycle Active
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